Diameter (mm)
76.2 ~ 200
Type / Dopant N: Phosphorus
P: Boron
Gas

PH3、B2H6、AsH3

Resistivity (Ω.cm)

N: 2 × 10-3 ~ 1,250


P: 1 × 10-2 ~ 100

Epi-Layer Thickness (μm)
0.1 ~ 125
* Multi layers are available
* Other customized specifications are welcome
 
 
Oxygen / Carbon
Concentration
<2 × 1018 /cm2


Metallic Surface Concentration

<2 × 1013 /cm2
Dislocation
<103 /cm2
Uniformity
Thickness
<± 2%
Ge Element
<30%
B Concentration
(Thin Film Resistivity)
<± 3%
Particle (> 0.3μm)
< 100 pcs

 

 
 
Copyright ©Atecom Technology Co., Ltd.2007 All Rights Reserved