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| Diameter (mm) |
50.8 |
76.2 |
100 |
150 |
| Crystal Orientation |
Upon customer request |
| Thickness (μm) |
| TIR (μm) |
≦3 |
≦3 |
≦3 |
≦4 |
| TTV (μm) |
≦3 |
≦3 |
≦4 |
≦6 |
| Warp (μm) |
≦4 |
≦6 |
≦8 |
≦10 |
| Particle > 0.5μm(pcs) |
＜50 |
＜50 |
＜50 |
＜100 |
| LFPD(15×15mm;μm) |
＜1.0 |
＜1.5 |
＜1.5 |
＜1.5 |
| Surface |
As-Cut / Lapped / Etched / Polished |
|
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| |
0 |
Mobility
(cm2/v.s) |
Resistivity
(Ω.cm) |
Camier Concentration
(/cm3) |
EPD(/cm2) |
Semi-Insulating GaAs Wafer |
≧6,000 |
≧1×107 |
- - |
≦1×103
(for 4"~6") |
Low-Resistivity GaAs Wafer |
≧1,200 |
- - |
5×1017 ~5×1018 |
A: ≦500
B: ≦5,000 |
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