SiC Wafer
Silicon Carbide Wafer
The KEY material for EV optomotive, and Future AR application.
The perfect polytype and WGB characteristics solve the thermal, hardness, and electrons.
Please refer to the table for detailed specifications
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Parameter
Specification
Unit
Diameter
50.8/ 76.2 /100 /150 /200
mm
Polytype
4H-Nitrogen / 4H-Semi Insulating
Resistivity
4H-N: 0.015 ~ 0.028 / 4H-SI: >1E7
Ω.cm
Thickness
(330 ~ 500) ± 25
µm
Orientation
4H-N: Off-axis: 4˚± 0.5˚off toward (11-20) ;
4H-SI: On-axis: <0001> ± 0.5˚
degree
Primary Flat / Notch
(10-10) / <11-20>/ <1-100>
<20~40
Secondary Flat
2" ~4": Silicon Face: 90˚ CW from Primary Flat ± 5˚ ;
Other Size: None
degree
Micropipe Density
≤1~ ≤15
cm-2
Surface
CMP or othres
Integrated Circuits
Detector
Sensor Device
MEMS Fabrication
Opto-Electronic Components
Solar Cells
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