Silicon Carbide Wafer
The KEY material for EV optomotive, and Future AR application.
The perfect polytype and WGB characteristics solve the thermal, hardness, and electrons.
Silicon Carbide Epitaxial Wafer
SiC EPI wafers are used in producing Schottky diodes, MOSFETs, JFETs, 650V~3300V or even higher.
Silicon Carbide Ingot
Grown using the PVT (Physical Vapor Transport) method, this material is the most critical for the future of the electronics industry.
There are two primary types of characteristics: 4H-N (Conductive), used for Power applications; and 4H-SI (Semi-Insulating), primarily used for RF (Radio Frequency) or AR (Augmented Reality).
Gallium Nitride Free Standing Bulk Wafer
Power Electronics: Leveraging its superior Wide Bandgap (WBG) characteristics, it is applied in high-voltage and high-power components. (註：寬能隙的專業術語為 Wide Bandgap)
Radio Frequency (RF) Communications: Suitable for high-frequency signal transmission and recognized as one of the high-performance materials for future 6G communications.
Artificial Intelligence (AI): Serving as a next-generation material to support critical hardware components required for AI computing.
Electric Vehicles (EV): Applied in power conversion systems related to electric vehicles (such as on-board chargers and inverters).
Optoelectronic Applications: While FS (Free-Standing) Wafers are primarily used for power and RF, GaN-based technology is also widely utilized in the manufacturing of green and blue LEDs.
Gallium Oxide Wafer
The Next Generation Material, the great WGB(wide band gap) to use on Power, RF and more.
Power AlGaN HEMT: D-Mode & E-Mode
Power AlGaN/GaN High Electron Mobility Transistors (Power AlGaN HEMT)
Specifications are customizable. These are commonly found in mobile phone fast-charging adapters and electric vehicle (EV) charging stations, characterized by their excellent switching loss performance.
Green Blue LED Wafer
Green and Blue LED Wafers These are primarily used in display devices, such as smartphone screens and television displays, as well as in future optical communications.
Power HEMT: D-MODE/ E-MODE
Power AlGaN HEMT structure, the other solution can reach power application.
Gallium Nitride Template Wafer
More common on LED or Power use, which is Sapphire based wafer.
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